- 您现在的位置：买卖IC网 > Sheet目录413 > FCA36N60NF (Fairchild Semiconductor)MOSFET N-CH 600V 34.9A TO3PN
Package Marking and Ordering Information
Part Number
FCA36N60NF
Top Mark
FCA36N60NF
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 1 mA, V GS = 0 V,T J = 25 o C
600
-
-
V
Δ BV DSS
/ Δ T J
Breakdown Voltage Temperature
Coefficient
I D = 1 mA, Referenced to
25 o C
-
0.60
-
V/ o C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V DS = 480 V, V GS = 0 V
T J = 125 o C
V GS = ±30 V, V DS = 0 V
-
-
-
-
-
-
10
100
±100
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 18 A
V DS = 20 V, I D = 18 A
3.0
-
-
3.7
80
39
5.0
95
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Q g(tot)
Q gs
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 100 V, V GS = 0 V,
f = 1 MHz
V DS = 380 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 480 V, V GS = 0 V
V DS = 380 V, I D = 18 A,
V GS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
3191
145
5
81
338
86
16
36
1.2
4245
195
8
-
-
112
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380 V, I D = 18 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
27
17
92
4
64
44
194
18
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
36
108
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 18 A
V GS = 0 V, I SD = 18 A,
dI F /dt = 100 A/ μ s
-
-
-
-
166
1.3
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 12 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 36 A, di/dt ≤ 1200 A/ μ s, V DD = 380 V, starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FCA36N60NF Rev. C1
2
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FCA47N60_F109
MOSFET N-CH 600V 47A TO-3P
FCA47N60F
MOSFET N-CH 600V 47A TO-3PN
FCA76N60N
MOSFET N-CH 600V 76A TO-3PN
FCB20N60FTM
MOSFET N-CH 600V 20A D2PAK
FCB20N60TM
MOSFET N-CH 600V 20A D2PAK
FCB36N60NTM
MOSFET N-CH 600V 36A D2PAK
FCD4N60TM_WS
MOSFET N-CH 600V 3.9A DPAK
FCD5N60TF
MOSFET N-CH 600V 4.6A DPAK
相关代理商/技术参数
FCA-3R6334-R
制造商:COOPER BUSSMANN 功能描述:CAP 0.33 F SERIES & AB F-SERIES
FCA-410
制造商:MACOM 制造商全称:Tyco Electronics 功能描述:Tyco Electronics Mid-Range Military/Aerospace Relays 10 AMPERES, DPDT
FCA-410-0
制造商:Struthers-Dunn 功能描述:
FCA4100RJ
功能描述:线绕电阻器 - 透孔 FCA4 100R 5% LP RoHS:否 制造商:Bourns 电阻:10 Ohms 容差:5 % 功率额定值:7 W 温度系数:200 PPM / C 系列:FW 端接类型:Axial 工作温度范围:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封装:Ammo 产品:Power Resistors Wirewound High Energy
FCA-410-1
制造商:Struthers-Dunn 功能描述:
FCA-410-10
制造商:TE Connectivity 功能描述:
FCA-410-104
制造商:TE Connectivity 功能描述:
FCA-410-11
制造商:TE Connectivity 功能描述: